I-V relations and enhanced mobility of metal vacancies in acceptor doped poly crystalline BaTiO3 under an oxygen activity gradient

Abstract: Acceptor doped barium titanate ceramic samples were prepared and exposed to oxygen activity gradients at elevated temperatures. When an oxygen activity gradient is imposed on such a pellet, a pin junction is formed. In situ measurements of the I–V relations were performed under various oxygen activity gradients. These measurements show very strong memory effects. An explanation of this behaviour is suggested based on the assumption of enhanced mobility of metal vacancies due to the oxygen activity gradient.

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